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| MITSUBISHI PM100RSD120 PM100RSD120 FLAT-BASE TYPE FLAT-BASE TYPE INSULATED PACKAGE INSULATED PACKAGE PM100RSD120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM. * 3 100A, 1200V Current-sense IGBT for 15kHz switching * 50A, 1200V Current-sense regenerative brake IGBT * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) * Acoustic noise-less 18.5/22kW class inverter application * UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 135 1 120.5 0.5 40.68 LABEL 4- 5.5 MOUNTING HOLES 13 15 17 19 14 16 18 24.1 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 Br UN VN WN FO 16.5 11 1234 5678 9 11 10 12 3.22 20 P 10 3-2 10 3-2 3-2 66.44 10 6-2 95.5 0.5 110 1 20 N B PPS 39.5 10.5 2.54 13 U V 26 2-2.54 19- W 3.22 26 0.5 4-R6 6-M5 NUTS Screwing depth Min9.0 3-2 0.5 0.5 0.3 51.5 A 11.6 33.7 34.7 24.1 -0.5 23.1 7.7 4 +1.0 21.3 A : DETAIL 10.6 5 Jul. 2005 MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5k WP Br Fo VNC WN VN1 VN UN VWPC VWP1 VP VVP1 UP VUP1 UFO WFO VFO VVPC VUPC Rfo Rfo Rfo Rfo Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd Si Out Gnd Si Out Gnd TEMP Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Th B N W V U P MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 1200 100 200 595 -20 ~ +150 Unit V A A W C BRAKE PART Symbol VCES IC ICP PC VR(DC) IF Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse Voltage FWDi Forward Current Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C TC = 25C TC = 25C Ratings 1200 50 100 416 1200 50 -20 ~ +150 Unit V A A W V A C CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN * VN * WN * Br-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals Ratings 20 20 20 20 Unit V V V mA Jul. 2005 MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125C Start Applied between : P-N, Surge value or without switching (Note-1) Ratings 800 1000 -20 ~ +100 -40 ~ +125 2500 Unit V V C C Vrms 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) TC measurement point is as shown below. (Base plate depth 3mm) Tc THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c')Q Rth(j-c')F Rth(j-c')Q Rth(j-c')F Rth(c-f) Parameter Test Condition Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Brake IGBT part (Note-1) Brake FWDi part (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Brake IGBT part (Note-2) Brake FWDi part (Note-2) Case to fin, Thermal grease applied (per 1 module) Min. -- -- -- -- -- -- -- -- -- Limits Typ. -- -- -- -- -- -- -- -- -- Max. 0.21 0.35 0.30 0.80 0.13 0.21 0.22 0.36 0.018 Unit Junction to case Thermal Resistances Contact Thermal Resistance (Note-2) TC measurement point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V, IC = 100A VCIN = 0V, Pulsed (Fig. 1) -IC = 100A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 15V0V VCC = 600V, IC = 100A Tj = 125C Inductive Load (upper and lower arm) VCE = VCES, VCIN = 15V (Fig. 4) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.5 -- -- -- -- -- -- Limits Typ. 2.4 2.1 2.5 1.0 0.15 0.4 2.5 0.7 -- -- Max. 3.2 2.8 3.5 2.5 0.3 1.0 3.5 1.2 1 10 Unit V V Switching Time Collector-Emitter Cutoff Current P N B U V W 63mm C/W s (Fig. 3) Tj = 25C Tj = 125C mA Jul. 2005 MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE BRAKE PART Symbol VCE(sat) VFM ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current VD = 15V, IC = 50A VCIN = 0V, Pulsed IF = 50A VCE = VCES, VCIN = 15V Test Condition Tj = 25C Tj = 125C (Fig. 2) Tj = 25C Tj = 125C Min. -- -- -- -- -- Limits Typ. 2.65 2.60 2.5 -- -- Max. 3.30 3.25 3.5 1 10 Unit V V mA (Fig. 1) (Fig. 4) CONTROL PART Symbol ID Vth(on) Vth(off) Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Test Condition VD = 15V, VCIN = 15V VN1-VNC VXP1-VXPC Min. -- -- 1.2 1.7 228 145 75 -- -- -- 111 -- 11.5 -- -- -- 1.0 Limits Typ. 60 15 1.5 2.0 345 -- -- 340 144 10 118 100 12.0 12.5 -- 10 1.8 Max. 82 20 1.8 2.3 -- -- -- -- -- -- 125 -- 12.5 -- 0.01 15 -- A s C V mA ms Unit mA V Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Tj = 25C Inverter part VD = 15V (Fig. 5,6) Tj = 125C Break part -20 Tj 125C, VD = 15V (Fig. 5,6) Inverter part -20 Tj 125C, VD = 15V (Fig. 5,6) Brake part VD = 15V Base-plate Temperature detection, VD = 15V -20 Tj 125C VD = 15V, VFO = 15V VD = 15V (Fig. 5,6) Trip level Reset level Trip level Reset level (Note-3) (Note-3) OC Over Current Trip Level A SC toff(OC) OT OTr UV UVr IFO(H) IFO(L) tFO Short Circuit Trip Level Over Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width output output output output output (Note-3) Fault Fault Fault Fault Fault is given only when the internal OC, SC, OT & UV protection. of OC, SC and UV protection operate by upper and lower arms. of OT protection operate by lower arm. of OC, SC protection given pulse. of OT, UV protection given pulse while over level. MECHANICAL RATINGS AND CHARACTERISTICS Symbol -- -- -- Parameter Mounting torque Mounting torque Weight Main terminal Mounting part -- Test Condition screw : M5 screw : M5 Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 560 Max. 3.5 3.5 -- Unit N*m N*m g RECOMMENDED CONDITIONS FOR USE Symbol VCC VD VCIN(on) VCIN(off) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Test Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-4) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Using Application Circuit input signal of IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value 800 15 1.5 0.8 4.0 20 3.0 Unit V V V kHz s (Note-4) Allowable Ripple rating of Control Voltage : dv/dt 5V/s, 2Vp-p Jul. 2005 MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "OC" and "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) IN Fo IN Fo P, (U,V,W) VCIN (0V) V Ic VCIN (15V) V -Ic VD (all) U,V,W, (N) VD (all) U,V,W,B, (N) Fig. 1 VCE(sat) Test a) Lower Arm Switching P Fig. 2 VEC, (VFM) Test VCIN (15V) VCIN Signal input (Upper Arm) Signal input (Lower Arm) Fo Fo U,V,W trr Irr CS VCE Ic 90% Vcc 90% N b) Upper Arm Switching VCIN Signal input (Upper Arm) Signal input (Lower Arm) VD (all) P Ic VCIN U,V,W 10% 10% tc (on) 10% tc (off) 10% Fo CS Vcc td (on) tr td (off) tf VCIN (15V) Fo (ton= td (on) + tr) N (toff= td (off) + tf) VD (all) Ic Fig. 3 Switching time Test circuit and waveform P, (U,V,W) A IN Fo VCIN Pulse VCE VCIN (15V) Over Current VD (all) U,V,W, (N) IC toff (OC) Constant Current OC Fig. 4 ICES Test P, (U,V,W) IN Fo Short Circuit Current VCC IC Constant Current VCIN SC VD (all) U,V,W, (N) IC Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform P VD VCINP U,V,W Vcc VD VCINN N Ic VCINP 0V VCINN 0V t t tdead tdead tdead Fig. 7 Dead time measurement point example Jul. 2005 MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE P 20k 10 VUP1 UFO UP VUPC Rfo Vcc Fo In OUT Si U VD IF + - GND GND Vcc Fo In GND GND Vcc Fo 0.1 VVP1 VFO Rfo OUT Si V VD VP VVPC VWP1 WFO Rfo M OUT Si W VD 20k WP VWPC In GND GND Vcc Fo OUT Si IF 10 UN 0.1 In GND GND N TEMP Th 20k IF 10 Vcc VN Fo In OUT Si 0.1 20k GND GND VN1 10 Vcc Fo In OUT Si B VD IF WN 0.1 4.7k VNC GND GND Vcc Br 5V 1k Fo In Rfo OUT Si GND GND Fo : Interface which is the same as the U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Quick opto-couplers : TPLH, TPLH 0.8s. Use High CMR type. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance. Slow switching opto-coupler : recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active. Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. * * * * * * Jul. 2005 MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES (Inverter Part) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 2.5 VD = 15V 120 Tj = 25C COLLECTOR CURRENT IC (A) 100 80 60 40 20 0 VD = 17V 15V 13V 2 1.5 1 0.5 Tj = 25C Tj = 125C 0 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 3 SWITCHING TIME tc(on), tc(off) (s) SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 VCC = 600V VD = 15V Tj = 25C Tj = 125C 2 Inductive load 7 5 4 3 2.5 2 1.5 1 0.5 0 12 IC = 100A Tj = 25C Tj = 125C 13 14 15 16 17 18 100 7 5 4 3 2 tc(off) tc(on) tc(on) tc(off) 10-1 1 10 2 3 4 5 7 102 2 3 4 5 7 103 CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR CURRENT IC (A) 101 SWITCHING TIME ton, toff (s) 7 5 4 3 2 SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 ESW(on) ESW(off) ESW(off) 101 7 5 4 3 2 7 5 4 3 2 toff ton VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load 2 3 4 5 7 102 2 3 4 5 7 103 100 7 5 4 3 2 100 ESW(on) VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load 2 3 4 5 7 102 2 3 4 5 7 103 10-1 1 10 10-1 1 10 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Jul. 2005 MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE COLLECTOR RECOVERY CURRENT -IC (A) DIODE FORWARD CHARACTERISTICS (TYPICAL) 7 5 4 3 2 REVERSE RECOVERY TIME trr (s) 102 VD = 15V 5 4 3 2 5 4 3 2 101 7 5 4 3 2 10-1 7 5 4 3 2 trr 101 VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load 7 5 4 3 2 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 100 10-2 1 10 2 3 4 5 7 102 2 3 4 5 7 103 100 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR RECOVERY CURRENT -IC (A) ID VS. fc CHARACTERISTICS (TYPICAL) 120 CIRCUIT CURRENT ID (mA) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 101 7 5 3 2 7 5 3 2 7 5 3 2 100 80 60 40 20 0 VD = 15V Tj = 25C N-side 100 10-1 P-side 10-2 0 5 10 15 20 25 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)Q = 0.21C/W CARRIER FREQUENCY fc (kHz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 7 5 3 2 7 5 3 2 7 5 3 2 100 10-1 10-2 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)F = 0.35C/W Jul. 2005 REVERSE RECOVERY CURRENT lrr (A) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 102 7 7 Irr MITSUBISHI PM100RSD120 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES (Brake Part) OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 3 2.5 2 1.5 1 0.5 0 VD = 15V Tj = 25C Tj = 125C 0 10 20 30 40 50 60 60 50 40 30 20 10 0 VD = 17V 15V 13V 0 0.5 1 1.5 2 2.5 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR RECOVERY CURRENT -IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 3 2.5 2 1.5 1 0.5 0 12 IC = 50A Tj = 25C Tj = 125C 13 14 15 16 17 18 DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 VD = 15V 101 7 5 4 3 2 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 100 CONTROL SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 7 5 3 2 7 5 3 2 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 101 7 5 3 2 7 5 3 2 7 5 3 2 100 100 10-1 10-1 10-2 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)Q = 0.30C/W 10-2 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)F = 0.80C/W Jul. 2005 |
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